BFS 17W E6327 Infineon Technologies, BFS 17W E6327 Datasheet

BFS 17W E6327

Manufacturer Part Number

BFS 17W E6327

Description

TRANSISTOR NPN RF 15V SOT-323

Manufacturer

Infineon Technologies

Datasheet

1.BFS_17W_E6327.pdf (7 pages)

Specifications of BFS 17W E6327

Package / Case

SOT-323

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

15V

Frequency - Transition

1.4GHz

Noise Figure (db Typ @ F)

3.5dB ~ 5dB @ 800MHz

Power - Max

280mW

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 2mA, 1V

Current - Collector (ic) (max)

25mA

Mounting Type

Surface Mount

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Maximum Operating Frequency

2.5 GHz

Collector- Emitter Voltage Vceo Max

15 V

Continuous Collector Current

0.025 A

Power Dissipation

280 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BFS17WE6327
BFS17WE6327XT
SP000011082

Current page: 1 of 7
Download datasheet (68Kb)

NPN Silicon RF Transistor

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFS17W

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current, f = 10 MHz

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

Pb-containing package may be available upon special request

T S is measured on the collector lead at the soldering point to the pcb

For calculation of R

For broadband amplifiers up to 1 GHz at

Pb-free (RoHS compliant) package

Qualified according AEC Q101

collector currents from 1 mA to 20 mA

93 °C

thJA

please refer to Application Note Thermal Resistance

Marking

MCs

1 = B

Symbol

Pin Configuration

CEO

CBO

EBO

tot

stg

thJS

2 = E

3 = C

-65 ... 150

Value

280

150

2.5

205

Package

SOT323

2007-03-30

BFS17W

Unit

°C

Unit

K/W

Related parts for BFS 17W E6327

BFS 17W E6327 Summary of contents

Page 1

NPN Silicon RF Transistor For broadband amplifiers GHz at collector currents from Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Maximum Ratings ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 200 MHz mA 200 MHz C ...

Page 4

Total power dissipation P 320 mW 240 200 160 120 Permissible Pulse Load totmax totDC 0.005 0.01 ...

Page 5

Transition frequency parameter CE 3 GHz 2 1 10V 0. BFS17W 2007-03-30 ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords

BFS 17W E6327 datasheet
BFS 17W E6327 data sheet
BFS 17W E6327 pdf datasheet
BFS 17W E6327 component
BFS 17W E6327 part
BFS 17W E6327 distributor
BFS 17W E6327 RoHS
BFS 17W E6327 datasheet download