BFS 481 H6327 Infineon Technologies, BFS 481 H6327 Datasheet
BFS 481 H6327
Specifications of BFS 481 H6327
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BFS 481 H6327 Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain broadband amplifiers at collector currents from 0 GHz 0 900 MHz T Two (galvanic) internal isolated Transistors in one package For ...
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Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation T 83 °C S Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 2) Junction - soldering point Electrical Characteristics at ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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Total power dissipation P tot 200 mW 160 140 120 100 Permissible Pulse Load totmax totDC 0.005 0.01 ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...