BFS 17S H6327 Infineon Technologies, BFS 17S H6327 Datasheet
BFS 17S H6327
Specifications of BFS 17S H6327
Related parts for BFS 17S H6327
BFS 17S H6327 Summary of contents
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NPN Silicon RF Transistor For broadband amplifiers GHz at collector currents from BFS17S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 200 MHz mA 200 MHz C ...
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Total power dissipation P tot 300 mW 240 220 200 180 160 140 120 100 Permissible Pulse Load totmax totDC ...
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Transition frequency parameter CE 3 GHz 2 1 10V 0. BFS17S 2007-03-30 ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...