BFS17,215 NXP Semiconductors, BFS17,215 Datasheet

TRANS NPN 25MA 15V 1GHZ SOT23

BFS17,215

Manufacturer Part Number
BFS17,215
Description
TRANS NPN 25MA 15V 1GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFS17,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
25 @ 2mA @ 1V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
1600 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
25V
Emitter-base Voltage
2.5V
Collector Current (dc) (max)
25mA
Dc Current Gain (min)
25
Frequency (max)
1.6GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1652-2
933082771215
BFS17 T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17
NPN 1 GHz wideband transistor
Product specification
September 1995

Related parts for BFS17,215

BFS17,215 Summary of contents

Page 1

DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...

Page 2

... NXP Semiconductors NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 package. APPLICATIONS  A wide range of RF applications such as: – Mixers and oscillators in TV tuners – RF communications equipment. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector QUICK REFERENCED DATA SYMBOL PARAMETER V collector-base voltage ...

Page 3

... NXP Semiconductors NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE f transition frequency ...

Page 4

... NXP Semiconductors NPN 1 GHz wideband transistor 100 handbook, halfpage  Fig.2 DC current gain as a function of collector current. 2 handbook, halfpage f T (GHz  500 MHz Fig.4 Transition frequency as a function of collector current. September 1995 MEA395 handbook, halfpage (mA MEA393 handbook, halfpage (mA 2 (pF) 1 ...

Page 5

... NXP Semiconductors NPN 1 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 September 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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