FDC654P Fairchild Semiconductor, FDC654P Datasheet - Page 4

• Manufacturer Part Number: FDC654P
• Description: MOSFET P-CH 30V 3.6A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC654P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 298pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC654P

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.01
0.1
R
SINGLE PULSE
0.0001
R
I
1
D
DS(ON)
= -3.6A
V
JA
T
GS
A
1
= 156
= 25
= -10V
LIMIT
D = 0.5
o
o
0.2
C
C/W
0.1
-V
0.05
DS
2
0.02
, DRAIN-SOURCE VOLTAGE (V)
Q
0.01
1
g
, GATE CHARGE (nC)
0.001
3
DC
SINGLE PULSE
1s
100ms
Figure 11. Transient Thermal Response Curve.
V
4
10ms
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= -5V
10
1ms
100 s
5
0.01
-15V
10 s
6
-10V
100
7
0.1
t
1
, TIME (sec)
400
300
200
100
10
8
6
4
2
0
0
0.01
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
1
6
-V
0.1
DS
Power Dissipation.
C
OSS
, DRAIN TO SOURCE VOLTAGE (V)
12
t
10
1
, TIME (sec)
C
1
ISS
18
P(pk)
Duty Cycle, D = t
T
R
J
R
JA
- T
100
JA
SINGLE PULSE
(t) = r(t) + R
R
10
A
t
JA
= 156
T
1
= P * R
24
t
A
= 156°C/W
2
FDC654P Rev E1(W)
= 25°C
f = 1 MHz
V
o
GS
C/W
= 0 V
JA
1
JA
(t)
/ t
100
2
30
1000