FDC654P Fairchild Semiconductor, FDC654P Datasheet
FDC654P
Manufacturer Part Number
FDC654P
Description
MOSFET P-CH 30V 3.6A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC654P.pdf
(5 pages)
Specifications of FDC654P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
298pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC654P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC654P
Manufacturer:
FAIRCHILD
Quantity:
4 670
Part Number:
FDC654P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC654P NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDC654P-NL
Manufacturer:
FAIRCHILD
Quantity:
2 000
Part Number:
FDC654P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC654P_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDC654P
Single P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
.654
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
FDC654P
Device
D
Parameter
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–3.6 A, –30 V.
Low gate charge (6.2 nC typical)
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–3.6
–30
–10
1.6
0.8
78
30
20
= 75 m
= 125 m
6
5
4
@ V
@ V
May 2003
GS
FDC654P Rev E1 (W)
GS
3000 units
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
W
V
V
A
C
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FDC654P Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ May 2003 –10 V DS(ON 125 –4.5 V DS(ON Ratings Units – –3.6 A –10 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC654P Rev E1 (W) ...
Page 2
... Min Typ Max Units –30 V –22 mV/ C –1 100 nA –100 nA –1 –1.9 – mV 100 125 90 115 =125 C – 298 6 1.2 nC –1.3 A –0.8 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper FDC654P Rev E1(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -3.5V GS -4.0V -4.5V -5.0V -6.0V -7.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC654P Rev E1( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 156 C/W JA P(pk ( Duty Cycle 100 FDC654P Rev E1(W) 30 1000 ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...