FQA13N50C Fairchild Semiconductor, FQA13N50C Datasheet

no-image

FQA13N50C

Manufacturer Part Number
FQA13N50C
Description
MOSFET N-CH 500V 13.5A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA13N50C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 6.75A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
2055pF @ 25V
Power - Max
218W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA13N50C
Manufacturer:
FAIRCHILD
Quantity:
295
Part Number:
FQA13N50C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQA13N50C
Manufacturer:
Fairchi/ON
Quantity:
56 000
Part Number:
FQA13N50C
Manufacturer:
华奥DHA
Quantity:
20 000
Part Number:
FQA13N50CF
Manufacturer:
FSC
Quantity:
21 000
Part Number:
FQA13N50CF
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FQA13N50CF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
FQA13N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JS
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
TO-3PN
FQA Series
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 13.5A, 500V, R
• Low gate charge ( typical 43 nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
! ! ! !
! ! ! !
0.24
Typ
DS(on)
--
--
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
FQA13N50C
-55 to +150
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
= 0.48
13.5
13.5
21.8
1.56
500
860
218
300
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
8.5
4.5
54
30
@V
Max
0.58
40
--
QFET
GS
= 10 V
Rev. A, October 2004
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

Related parts for FQA13N50C

FQA13N50C Summary of contents

Page 1

... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● FQA13N50C Units 500 13.5 8 860 mJ 13.5 21.8 mJ 4.5 V/ns 218 1.56 W/°C -55 to +150 300 Typ Max ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 5.6mH 13.5A 50V 13.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 400 125° ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 C iss 2000 C oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation Notes : ※ 1. 250µ s Pulse Test ℃ 10V 20V GS Note : ℃ ...

Page 4

... J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve for FQA13N50C ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 14 ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2004 Fairchild Semiconductor Corporation TO-3PN Dimensions in Millimeters Rev. A, October 2004 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

Related keywords