FQA13N50C Fairchild Semiconductor, FQA13N50C Datasheet
FQA13N50C
Manufacturer Part Number
FQA13N50C
Description
MOSFET N-CH 500V 13.5A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQA13N50C.pdf
(8 pages)
Specifications of FQA13N50C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 6.75A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
2055pF @ 25V
Power - Max
218W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQA13N50C
Manufacturer:
FAIRCHILD
Quantity:
295
Company:
Part Number:
FQA13N50C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQA13N50C
Manufacturer:
Fairchi/ON
Quantity:
56 000
Part Number:
FQA13N50C
Manufacturer:
华奥DHA
Quantity:
20 000
Company:
Part Number:
FQA13N50CF
Manufacturer:
FSC
Quantity:
21 000
Part Number:
FQA13N50CF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Implementation of change:
Expected 1st Device Shipment Date: 2008/08/10
Earliest Year/Work Week of Changed Product: WW33
Change Type Description: Passivation Material, Fab Process Change
Description of Change (From): There is no passivation layer.
Description of Change (To): Adding Passivation layer on front metal.
Reason for Change : To improve product quality.
Qual/REL Plan Numbers : Q20070212
Qualification :
All items were passed.
Results/Discussion
Test: (Autoclave)
Lot
Q20070212AAACLV
Q20070212ABACLV
Q20070212ACACLV
Test: (High Temperature Gate Bias)
Lot
Q20070212AAHTGB
Q20070212AAHTGB
Q20070212ABHTGB
Q20070212ABHTGB
Q20070212ACHTGB
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
500-HOURS
0/77
0/77
0/77
96-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
Date Issued On : 2008/05/14
Date Created : 2008/05/09
Failure Code
Failure Code
PCN# : Q2081907
Pg. 1
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Datasheet:
FQA13N50C Summary of contents
Page 1
... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...
Page 2
... Test: -65C, 150C (Temperature Cycle) Lot Device Q20070212AATMCL1 FQPF6N90C Q20070212AATMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Product Id Description : There are some QFETs. Affected FSIDs : FQA13N50C FQB3N60CTM FQB9N50CTM_WS FQD2N60CTM FQD3N50CTM FQD3N60CTM FQD5N50CTF_SBEC001 FQD5N50CTM_F105 FQD6N50CTM_F101 FQI13N50CTU FQP12N60C FQP13N50C_F080 FQP2N60C_F105 FQP3N60C FQP5N50C_F105 FQP9N50C_F080 FQPF13N50C ...