FQA13N50C Fairchild Semiconductor, FQA13N50C Datasheet - Page 4

• Manufacturer Part Number: FQA13N50C
• Description: MOSFET N-CH 500V 13.5A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA13N50C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 6.75A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 218W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
-50
T
V
vs Temperature
J
10
, Junction Tem perature [
DS
0
1
, Drain-Source Voltage [V]
1 0
1 0
※
1 0
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
Figure 11. Transient Thermal Response Curve for FQA13N50C
Notes :
-1
-2
0
1 0
C
J
= 150
= 25
-5
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
o
C
o
0 .2
0 .1
50
C
DS(on)
100 ms
DC
10 ms
10
(Continued)
100
1 ms
2
1 0
o
C]
-4
s in g le p u ls e
100 s
※
1. V
2. I
Notes :
t
1
D
G S
= 250 µA
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
10 s
= 0 V
150
1 0
10
-3
3
200
1 0
-2
14
12
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
25
-100
※
Figure 10. Maximum Drain Current
1 0
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
N o te s :
-1
DM
θ J C
J M
-50
- T
50
(t) = 0 .5 8
C
vs Case Temperature
= P
t
1
T
D M
t
T
vs Temperature
2
J
1 0
, Junction Temperature [
C
, Case Temperature [ ]
℃
* Z
0
0
/W M a x .
1
θ J C
/t
75
2
(t)
50
100
1 0
1
℃
100
o
C]
125
※
1. V
2. I
Notes :
150
D
GS
= 6.75 A
= 10 V
Rev. A, October 2004
150
200