HUF76429P3 Fairchild Semiconductor, HUF76429P3 Datasheet - Page 7

• Manufacturer Part Number: HUF76429P3
• Description: MOSFET N-CH 60V 47A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76429P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 47 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 74 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 203 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PSPICE Electrical Model
.SUBCKT HUF76429 2 1 3 ;
CA 12 8 1.95e-9
CB 15 14 1.95e-9
CIN 6 8 1.39e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 68.05
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.80e-9
LSOURCE 3 7 4.57e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 7.8e-3
RGATE 9 20 2.80
RLDRAIN 2 5 10
RLGATE 1 9 54.2
RLSOURCE 3 7 41.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*117),3))}
.MODEL DBODYMOD D (IS = 1.28e-12 IKF = 11.5 RS = 5.25e-3 TRS1 = 1.78e-3 TRS2 = 1.85e-6 CJO = 1.68e-9 TT = 6.14e-8 M = 0.48 XTI = 4.35)
.MODEL DBREAKMOD D (RS = 2.27e- 1TRS1 = 9.10e- 4TRS2 = -1e-6)
.MODEL DPLCAPMOD D (CJO = 1.23e- 9IS = 1e-3 0N = 10 M = 0.8)
.MODEL MMEDMOD NMOS (VTO = 1.98 KP = 3.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.80)
.MODEL MSTROMOD NMOS (VTO = 2.30 KP = 67 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.72 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 28.0 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.08e- 3TC2 = 1.35e-7)
.MODEL RDRAINMOD RES (TC1 = 8.25e-3 TC2 = 1.85e-5)
.MODEL RSLCMOD RES (TC1 = 4.97e-3 TC2 = 5.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.85e-3 TC2 = -9.48e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.72e- 3TC2 = 9.50e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -2.4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.1 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
rev 25 June 1999
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
6
8
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
MSTRO
14
+
-
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
HUF76429P3, HUF76429S3S Rev. B
7
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
2
3