HUF76429P3 Fairchild Semiconductor, HUF76429P3 Datasheet

HUF76429P3

Manufacturer Part Number

HUF76429P3

Description

MOSFET N-CH 60V 47A TO-220AB

Manufacturer

Fairchild Semiconductor

Series

UltraFET™r

Datasheet

1.HUF76429S3ST.pdf (10 pages)

Specifications of HUF76429P3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

22 mOhm @ 47A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

47A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

46nC @ 10V

Input Capacitance (ciss) @ Vds

1480pF @ 25V

Power - Max

110W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.018 Ohms

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

47 A

Power Dissipation

110 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Fall Time

74 ns

Minimum Operating Temperature

- 55 C

Rise Time

203 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HUF76429P3

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 10
Download datasheet (207Kb)

44A, 60V, 0.025 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

Symbol

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

NOTES:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

1. T

Continuous (T

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Derate Above 25

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

= 25

JEDEC TO-220AB

HUF76429P3

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

C to 150

(FLANGE)

DRAIN

= 25

= 100

SOURCE

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C, V

DRAIN

GATE

= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

SOURCE

GATE

Data Sheet

For severe environments, see our Automotive HUFA series.

JEDEC TO-263AB

HUF76429S3S

= 25

C, Unless Otherwise Specified

(FLANGE)

DRAIN

Features

• Ultra Low On-Resistance

• Simulation Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUF76429S3ST.

HUF76429P3

HUF76429S3S

- r

- Temperature Compensated PSPICE® and SABER™

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

PART NUMBER

Electrical Models

HUF76429P3, HUF76429S3S

DS(ON)

December 2001

, T

= 0.022

= 0.025

DGR

DSS

STG

pkg

HUF76429P3, HUF76429S3S

TO-220AB

TO-263AB

PACKAGE

Curves

Figures 6, 17, 18

-55 to 175

Figure 4

10V

0.74

110

300

260

HUF76429P3, HUF76429S3S Rev. B

76429P

76429S

BRAND

UNITS

Related parts for HUF76429P3

HUF76429P3 Summary of contents

Page 1

... HUF76429S3ST Unless Otherwise Specified , 0.022 10V 0.025 Curves GS PACKAGE BRAND TO-220AB 76429P TO-263AB 76429S HUF76429P3, HUF76429S3S UNITS 60 DSS 60 DGR Figure 4 DM Figures 6, 17, 18 110 D 0.74 -55 to 175 STG 300 L 260 pkg HUF76429P3, HUF76429S3S Rev ...

Page 2

... SD SD MIN TYP (Figure 12 0.018 - 0.021 - 0.022 - - - - - - - 13 - 203 - 7.8 - 100 - 51 - 104 - - = 30V 1.0mA - 1.3 - 3.8 - 9.7 - 1480 - 440 - 90 MIN TYP - - - - - - - - HUF76429P3, HUF76429S3S Rev. B MAX UNITS - 250 A 100 0.022 0.025 0.027 o 1.36 C C/W 325 155 ns 160 235 1 MAX UNITS 1. 230 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF76429P3, HUF76429S3S Rev. B 175 ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 2.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUF76429P3, HUF76429S3S Rev + 10V 47A GS D 120 160 200 o C) ...

Page 5

... A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 30V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT V = 10V 30V 47A d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUF76429P3, HUF76429S3S Rev. B 120 160 160 200 44A D = 22A d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUF76429P3, HUF76429S3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF76429P3, HUF76429S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF76429P3, HUF76429S3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF76429P3, HUF76429S3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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