HUF76429P3 Fairchild Semiconductor, HUF76429P3 Datasheet - Page 5

• Manufacturer Part Number: HUF76429P3
• Description: MOSFET N-CH 60V 47A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76429P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 47 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 74 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 203 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
600
450
300
150
3000
1000
100
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
0
30
1.2
1.0
0.8
0.4
0.6
0
-80
0.1
V
GS
= 4.5V, V
JUNCTION TEMPERATURE
-40
R
10
GS
V
DS
T
, GATE TO SOURCE RESISTANCE ( )
J
DD
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
0
= 30V, I
1.0
20
40
D
= 30A
t
t
r
f
80
30
V
GS
C
C
V
(Continued)
C
OSS
= V
RSS
120
GS
ISS
10
DS
o
= 0V, f = 1MHz
C)
, I
C
C
40
C
D
DS
GD
160
GS
= 250 A
t
t
+ C
d(ON)
d(OFF)
+ C
GD
GD
200
50
60
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
250
200
150
100
10
50
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
8
6
4
2
0
0
1.2
1.1
1.0
0.9
0
0
-80
V
V
GS
DD
I
D
= 10V, V
= 30V
5
VOLTAGE vs JUNCTION TEMPERATURE
GATE CURRENT
= 250 A
-40
R
10
GS
T
10
, GATE TO SOURCE RESISTANCE ( )
DD
J
, JUNCTION TEMPERATURE (
t
d(OFF)
= 30V, I
Q
0
g
, GATE CHARGE (nC)
15
20
D
40
= 47A
20
t
f
HUF76429P3, HUF76429S3S Rev. B
WAVEFORMS IN
DESCENDING ORDER:
80
30
25
I
I
D
D
= 44A
= 22A
120
30
o
C)
40
t
160
160
r
t
35
d(ON)
200
50
40