IRLU110ATU Fairchild Semiconductor, IRLU110ATU Datasheet - Page 4

• Manufacturer Part Number: IRLU110ATU
• Description: MOSFET N-CH 100V 4.7A I-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRLU110ATU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 440 mOhm @ 2.35A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 235pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U110A
1 0
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
-2
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
@ N o t e s :
- 5 0
1 . T
2 . T
3 . S i n g l e P u l s e
Fig 9. Max. Safe Operating Area
C
J
- 2 5
= 2 5
= 1 5 0
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
T
V
J
DS
o
, Junction Temperature [
C
o
, Drain-Source Voltage [V]
C
0
10
10
10
- 1
1
0
10
2 5
- 5
1 0
DS(on)
D=0.5
0.2
0.02
0.01
0.1
0.05
1
5 0
D C
7 5
10
t
1
- 4
1 0 m s
single pulse
@ N o t e s :
1 0 0
, Square Wave Pulse Duration
1 . V
2 . I
1 m s
o
GS
D
C]
1 0 0 s
= 2 5 0 A
1 2 5
= 0 V
Fig 11. Thermal Response
1 0
10
2
1 5 0
- 3
1 7 5
10
- 2
@ Notes :
P
1. Z
2. Duty Factor, D=t
3. T
DM
Fig 10. Max. Drain Current vs. Case Temperature
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
5
4
3
2
1
0
- 7 5
2 5
J M
J C
-T
10
(t)=5.6
C
t
Fig 8. On-Resistance vs. Temperature
- 5 0
- 1
=P
1
t
D M
2
*Z
- 2 5
5 0
o
T
[sec]
C/W Max.
J C
J
T
, Junction Temperature [
(t)
c
0
1
, Case Temperature [
10
/t
0
2
2 5
7 5
5 0
10
1 0 0
7 5
1
@ N o t e s :
1 0 0
1 . V
2 . I
o
C]
o
GS
D
C]
= 2 . 8 A
1 2 5
1 2 5
= 5 V
1 5 0
1 7 5
1 5 0
4