IRLU110ATU Fairchild Semiconductor, IRLU110ATU Datasheet

MOSFET N-CH 100V 4.7A I-PAK

IRLU110ATU

Manufacturer Part Number
IRLU110ATU
Description
MOSFET N-CH 100V 4.7A I-PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRLU110ATU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
440 mOhm @ 2.35A, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Input Capacitance (ciss) @ Vds
235pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10 A (Max.) @ V
Lower R
Symbol
Symbol
J
dv/dt
R
R
R
V
V
E
E
I
I
P
, T
I
T
DM
DSS
AR
D
GS
AS
AR
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
: 0.336
(Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
from case for 5-seconds
A
C
=25 C)
=25 C)
C
C
DS
=25 C)
=100 C)
*
= 100V
*
(3)
(1)
(2)
(1)
(1)
Typ.
--
--
--
- 55 to +150
IRLR/U110A
0.18
Value
100
300
4.7
4.7
2.2
6.5
2.5
16
58
22
1
BV
R
I
3
20
1. Gate 2. Drain 3. Source
D
3
D-PAK
DS(on)
DSS
= 4.7 A
Max.
110
5.6
50
= 0.44
2
= 100 V
1
2
3
I-PAK
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
W
V
A
A
V
A
C
Rev. B
1

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IRLU110ATU Summary of contents

Page 1

... Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8 Thermal Resistance Symbol R Junction-to-Case JC R Junction-to-Ambient JA R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation = 100V DS = =100 C) C (1) (2) (1) (1) ( from case for 5-seconds ...

Page 2

IRLR/U110A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

Fig 1. Output Characteristics V GS Top : 7 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3 ...

Page 4

IRLR/U110A Fig 7. Breakdown Voltage vs. Temperature ...

Page 5

Fig 12. Gate Charge Test Circuit & Waveform Current Regulator Same Type 50k 200nF 12V 300nF V GS 3mA R 1 Current Sampling (I ) Current Sampling (I G Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out ...

Page 6

IRLR/U110A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) ...

Page 7

DPAK Package Dimensions D - PAK Dimensions in Millimeters September 1999, Rev B ...

Page 8

IPAK Package Dimensions I - PAK Dimensions in Millimeters September 1999, Rev B ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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