IRLU110ATU Fairchild Semiconductor, IRLU110ATU Datasheet - Page 3

• Manufacturer Part Number: IRLU110ATU
• Description: MOSFET N-CH 100V 4.7A I-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRLU110ATU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 440 mOhm @ 2.35A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 235pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1 0
1 0
1 0
0 . 8
0 . 6
0 . 4
0 . 2
0 . 0
3 5 0
2 8 0
2 1 0
1 4 0
-1
7 0
1
0
1 0
0
1 0
0
-1
0
Top :
Bottom : 3.0 V
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 3. On-Resistance vs. Drain Current
C
C
C
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
iss
oss
rss
7.0 V
V
GS
Fig 1. Output Characteristics
V
V
DS
DS
5
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
V
GS
, Drain Current [A]
= 5 V
1 0
0
@ N o t e s :
C
C
C
iss
oss
rss
1 0
1 . 2 5 0 s P u l s e T e s t
2 . T
= C
= C
= C
V
GS
C
gs
ds
gd
1 0
= 2 5
= 1 0 V
+ C
+ C
1
gd
gd
o
C
( C
@ N o t e : T
ds
1 5
= s h o r t e d )
@ N o t e s :
1 . V
2 . f = 1 M H z
1 0
1
J
GS
= 2 5
= 0 V
o
C
2 0
1 0
1 0
1 0
-1
1
0
0
1 0
6
4
2
0
1 0
1 0
-1
0
Fig 4. Source-Drain Diode Forward Voltage
1
0
Fig 6. Gate Charge vs. Gate-Source Voltage
0 . 4
2 5
1 5 0
o
1 5 0
C
0 . 6
Fig 2. Transfer Characteristics
o
o
2
C
C
V
2 5
GS
o
V
Q
C
0 . 8
S D
G
, Gate-Source Voltage [V]
- 5 5
, Total Gate Charge [nC]
IRLR/U110A
, Source-Drain Voltage [V]
2
o
C
4
1 . 0
V
DS
V
DS
V
DS
= 8 0 V
= 5 0 V
= 2 0 V
1 . 2
@ N o t e s :
1 . V
2 . V
3 . 2 5 0 s P u l s e T e s t
6
@ N o t e s : I
1 . 4
@ N o t e s :
GS
DS
1 . V
2 . 2 5 0 s P u l s e T e s t
4
= 0 V
= 4 0 V
GS
= 0 V
1 . 6
D
= 5 . 6 A
8
1 . 8
1 0
2 . 0
6
3