FDS6673AZ Fairchild Semiconductor, FDS6673AZ Datasheet - Page 4

• Manufacturer Part Number: FDS6673AZ
• Description: MOSFET P-CH 30V 14.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6673AZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 4480pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS6673AZ Rev. C(W)
Typical Characteristics
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
0.001
Figure 9. Maximum Safe Operating Area.
R
0.01
Figure 7. Gate Charge Characteristics.
I
DS(ON)
0.1
SINGLE PULSE
R
D
0.0001
θ JA
1
= -14.5A
V
T
10
GS
A
= 125°C/W
LIMIT
= 25°C
= -10V
20
0.1
-V
D = 0.5
DS
0.2
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
0.02
30
Q
g
0.01
, GATE CHARGE (nC)
0.001
40
SINGLE PULSE
DC
1
10s
Figure 11. Transient Thermal Response Curve.
50
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
100ms
DS
= -10V
60
10ms
0.01
1ms
10
70
100 µs
-20V
80
-15V
100
0.1
90
t
1
, TIME (sec)
4
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
0
1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum
0.01
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Power Dissipation.
0.1
10
10
C
C
C
OSS
ISS
RSS
t
1
, TIME (sec)
P(pk)
15
1
Duty Cycle, D = t
T
R
J
R
θ JA
- T
θ JA
(t) = r(t) * R
A
100
= 125°C/W
t
1
= P * R
t
20
10
2
SINGLE PULSE
R
θ JA
θ JA
1
T
www.fairchildsemi.com
θ JA
/t
(t)
A
= 125°C/W
2
100
= 25°C
25
f = 1 MHz
V
GS
1000
= 0 V
1000
30