FDS6673AZ Fairchild Semiconductor, FDS6673AZ Datasheet - Page 2

• Manufacturer Part Number: FDS6673AZ
• Description: MOSFET P-CH 30V 14.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6673AZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 4480pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS6673AZ Rev. C(W)
Electrical Characteristics
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Off Characteristics
BV
∆ BV
I
I
On Characteristics (Note 2)
V
∆ V
R
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
RR
Symbol
FS
GS(th)
SD
∆ T
∆ T
DS(on)
iss
oss
rss
G
R
g
gs
gd
RR
GS(th)
θ JA
θ JC
DSS
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
a) 50°C/W (10 sec) 62.5°
C/W steady state when
mounted on a 1 in
of 2 oz copper
Parameter
θ CA
is determined by the user's board design.
2
pad
T
A
= 25°C unless otherwise noted
V
I
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
D
D
F
iF
GS
DS
GS
DS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –14.5 A,
= –250 µ A, Referenced to 25 ° C
= –250 µ A, Referenced to 25 ° C
/d
= –4.5 V, I
= 0 V, I
= –24 V, V
= ±20 V, V
= V
= –10 V, I
= –4.5 V, I
= –5 V, I
= –15 V, V
= 15 mV, f = 1.0 MHz
= –15 V, I
= –10 V, R
= –15 V, I
= –10 V
= 0 V, I
t
= 100 A/µs
GS
Test Conditions
2
, I
b) 105°C/W when
D
S
D
D
= –250 µ A
= –2.1 A
mounted on a .04 in
pad of 2 oz copper
D
D
D
= –250 µ A
D
GS
D
= –14.5 A
GS
DS
GEN
= –14.5 A
= –14.5 A,
= –1 A,
= –14.5A, T
= –12 A
= 0 V
= 0 V,
= 0 V
= 6 Ω
(Note 2)
(Note 2)
J
2
= 125 ° C
Min
–30
–1
4480
1190
Typ
–1.6
–0.7
–25
615
134
5.8
6.0
8.8
7.8
3.8
50
22
79
84
12
19
44
29
8
c) 125°/W when mounted
on a minimum pad.
Max
10.4
–2.1
–1.2
±10
214
126
118
7.2
–1
–3
35
16
11
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Units
mV/ ° C
mV/ ° C
m Ω
µ A
µ A
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V