FDS6673AZ Fairchild Semiconductor, FDS6673AZ Datasheet - Page 3

• Manufacturer Part Number: FDS6673AZ
• Description: MOSFET P-CH 30V 14.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6673AZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 4480pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS6673AZ Rev. C(W)
Typical Characteristics
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
80
60
40
20
80
60
40
20
0
1
0
-50
1.5
0
Figure 3. On-Resistance Variation with
V
V
Figure 1. On-Region Characteristics.
I
V
D
DS
GS
GS
= -14.5A
-25
= -5V
-6.0V
= -10V
= -10V
Figure 5. Transfer Characteristics.
2
0
-V
-V
0.5
T
DS
GS
J
, JUNCTION TEMPERATURE (°C)
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
-4.5V
25
Temperature.
2.5
50
-4.0V
1
75
T
3
A
100
= -55°C
-3.5V
1.5
125
125°· C
3.5
150
-3.0V
25°C
175
2
4
3
0.001
Figure 6. Body Diode Forward Voltage Variation
0.02
0.02
0.02
0.01
0.01
0.00
0.01
100
3.8
3.4
2.6
2.2
1.8
1.4
0.6
0.1
10
3
1
1
0
2
0
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
V
V
GS
T
GS
A
= 0V
Drain Current and Gate Voltage.
= 25
= - 3.0V
0.2
-V
o
C
SD
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
20
-V
4
T
GS
-3.5V
A
, GATE TO SOURCE VOLTAGE (V)
= 125°C
-I
0.4
T
D
, DRAIN CURRENT (A)
A
-4.0V
= 125
o
-4.5V
C
40
25°C
0.6
6
-5.0V
-55°C
0.8
-6.0V
60
8
I
D
www.fairchildsemi.com
1
= -7.3A
-10V
80
1.2
10