FDJ129P Fairchild Semiconductor, FDJ129P Datasheet - Page 3
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FDJ129P
Manufacturer Part Number
FDJ129P
Description
MOSFET P-CH 20V 4.2A SC75-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDJ129P_F077.pdf
(6 pages)
Specifications of FDJ129P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 4.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
SC75-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDJ129PTR
FDJ129P_NL
FDJ129P_NLTR
FDJ129P_NLTR
FDJ129P_NL
FDJ129P_NLTR
FDJ129P_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDJ129P
Manufacturer:
TDK
Quantity:
1 932
Part Number:
FDJ129P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
16
12
12
1.4
1.3
1.2
1.1
0.9
0.8
0.7
8
4
0
9
6
3
0
1
0.5
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
V
Figure 3. On-Resistance Variation
V
DS
GS
I
D
GS
=-4.5V
= -5V
= -4.2A
-25
= -4.5V
1
-V
-V
DS
GS
1
T
withTemperature.
0
J
-3.5V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
25
1.5
-3.0V
50
2
2
75
T
A
= -55
-2.5V
o
100
C)
o
3
C
2.5
125
-2.0V
125
o
C
25
o
C
150
3
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.22
0.18
0.14
0.06
0.02
0.01
100
0.1
0.1
10
1.8
1.6
1.4
1.2
0.8
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
1
0
0
V
V
Drain Current and Gate Voltage.
GS
GS
= 0V
=-2.5V
0.2
Gate-to-Source Voltage.
-V
T
SD
A
-V
= 25
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
4
, GATE TO SOURCE VOLTAGE (V)
o
C
T
0.4
-I
A
D
-3.0V
, DRAIN CURRENT (A)
= 125
T
A
o
C
= 125
-3.5V
0.6
3
8
25
o
C
o
C
-4.0V
-55
0.8
o
C
12
4
I
FDJ129P Rev G (W)
D
-4.5V
1
= -2.1A
16
1.2
5