FDJ129P Fairchild Semiconductor, FDJ129P Datasheet

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FDJ129P

Manufacturer Part Number
FDJ129P
Description
MOSFET P-CH 20V 4.2A SC75-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDJ129P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 4.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
SC75-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDJ129PTR
FDJ129P_NL
FDJ129P_NLTR
FDJ129P_NLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDJ129P
Manufacturer:
TDK
Quantity:
1 932
Company:
Part Number:
FDJ129P
Quantity:
1 694
Part Number:
FDJ129P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDJ129P
P-Channel -2.5 Vgs Specified PowerTrench
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
2007 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
, T
Device Marking
STG
SC75-6 FLMP
P-Channel
S
.A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
S
-2.5V
G
specified
– Continuous
– Pulsed
FDJ129P
Device
S
Parameter
MOSFET
S
S
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1a)
Features
• –4.2 A, –20 V.
• Low gate charge
• High performance trench technology for extremely
• Compact industry standard SC75-6 surface mount
• RoHS Compliant
low R
package
MOSFET
DS(ON)
4
5
6
Tape width
–55 to +150
8mm
R
R
Bottom Drain
Ratings
DS(ON)
DS(ON)
± 12
–4.2
–20
–16
1.6
77
= 70 mΩ @ V
= 120 mΩ @ V
November 2007
3
2
1
GS
GS
3000 units
Quantity
FDJ129P Rev G (W)
= –4.5 V
= –2.5 V
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDJ129P

FDJ129P Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1a) Reel Size 7’’ November 2007 mΩ –4.5 V DS(ON 120 mΩ –2.5 V DS(ON) GS Bottom Drain Ratings Units –20 V ± –4.2 A –16 1.6 W –55 to +150 °C °C/W 77 Tape width Quantity 8mm 3000 units FDJ129P Rev G (W) ...

Page 2

... Min Typ Max Units –20 –18 mV/°C –1 µA 100 nA –100 nA –0.6 –1.1 –1.5 3 mV/° mΩ 91 120 72 100 =125°C –8 11 585 780  pF 124 170 1.1 nC 1.2 nC –0.7 –1.2 (Note 110°C/W when mounted on a minimum pad copper. FDJ129P Rev G ( ...

Page 3

... C 1 0.1 0.01 0.001 0.0001 2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDJ129P Rev G ( 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 110°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 110 C/W θJA P(pk ( θJA Duty Cycle 100 FDJ129P Rev G (W) 20 1000 1000 ...

Page 5

... Dimensional Outline and Pad Layout FDJ129P Rev G (W) ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...

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