This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1a) Reel Size 7’’ November 2007 mΩ –4.5 V DS(ON 120 mΩ –2.5 V DS(ON) GS Bottom Drain Ratings Units –20 V ± –4.2 A –16 1.6 W –55 to +150 °C °C/W 77 Tape width Quantity 8mm 3000 units FDJ129P Rev G (W) ...
... Min Typ Max Units –20 –18 mV/°C –1 µA 100 nA –100 nA –0.6 –1.1 –1.5 3 mV/° mΩ 91 120 72 100 =125°C –8 11 585 780 pF 124 170 1.1 nC 1.2 nC –0.7 –1.2 (Note 110°C/W when mounted on a minimum pad copper. FDJ129P Rev G ( ...
... C 1 0.1 0.01 0.001 0.0001 2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDJ129P Rev G ( 1.2 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 110°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 110 C/W θJA P(pk ( θJA Duty Cycle 100 FDJ129P Rev G (W) 20 1000 1000 ...
... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...