FDJ129P Fairchild Semiconductor, FDJ129P Datasheet - Page 2

• Manufacturer Part Number: FDJ129P
• Description: MOSFET P-CH 20V 4.2A SC75-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ129P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDJ129PTR; FDJ129P_NL; FDJ129P_NLTR; FDJ129P_NLTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Electrical Characteristics
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Drain–Source Diode Characteristics and Maximum Ratings
V
t
Q
d(on)
r
d(off)
f
Symbol
DSS
GSSF
GSSR
D(on)
rr
the drain pins. R
FS
GS(th)
DS(on)
iss
oss
rss
SD
∆T
∆T
g
gs
gd
rr
θJA
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forwar Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
θJC
is guaranteed by design while R
Parameter
(Note 2)
a)
(Note 2)
77°C/W when mounted
on a 1in
copper.
θCA
is determined by the user's board design.
2
pad of 2 oz
T
A
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
d
D
D
F
= 25°C unless otherwise noted
iF
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
= –4.2 A,
/d
= –10 V, V
= –10 V, I
= 0 V,
= –16 V, V
= 12 V,
= –12 V, V
= V
= –4.5 V, I
= –2.5 V,
= –4.5 V, I
= –4.5 V, V
= –5 V,
= –10 V, I
= –4.5 V, R
= –4.5 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
I
S
I
V
I
I
D
D
D
D
D
D
= –1.5 A
D
GS
DS
DS
DS
GS
I
= –4.2,T
= –250 µA
= –250 µA
= –4.2 A
= –4.2 A
GEN
= –4.2 A,
D
= –1 A,
= 0 V
= 0 V
= –5 V
= 0 V
= –3.3 A
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min Typ Max Units
–0.6
–20
–8
b)
110°C/W when mounted
on a minimum pad of 2 oz
copper.
–1.1
–0.7
585 780 pF
124 170 pF
–18
1.1
1.2
61 95 pF
10
17
10
54
91
72
11
16
13
9
3
4
–100
–1.5
–1.2
100
120
100
–1
70
20
18
30
20
6
FDJ129P Rev G (W)
mV/°C
mV/°C
mΩ
µA
nA
nA
nC
nC
nC
nS
nC
ns
ns
ns
ns
V
V
A
S
V