FDJ129P Fairchild Semiconductor, FDJ129P Datasheet - Page 2
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FDJ129P
Manufacturer Part Number
FDJ129P
Description
MOSFET P-CH 20V 4.2A SC75-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDJ129P_F077.pdf
(6 pages)
Specifications of FDJ129P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 4.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
SC75-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDJ129PTR
FDJ129P_NL
FDJ129P_NLTR
FDJ129P_NLTR
FDJ129P_NL
FDJ129P_NLTR
FDJ129P_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDJ129P
Manufacturer:
TDK
Quantity:
1 932
Part Number:
FDJ129P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Electrical Characteristics
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Drain–Source Diode Characteristics and Maximum Ratings
V
t
Q
d(on)
r
d(off)
f
Symbol
DSS
GSSF
GSSR
D(on)
rr
the drain pins. R
FS
GS(th)
DS(on)
iss
oss
rss
SD
∆T
∆T
g
gs
gd
rr
θJA
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forwar Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
θJC
is guaranteed by design while R
Parameter
(Note 2)
a)
(Note 2)
77°C/W when mounted
on a 1in
copper.
θCA
is determined by the user's board design.
2
pad of 2 oz
T
A
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
d
D
D
F
= 25°C unless otherwise noted
iF
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
= –4.2 A,
/d
= –10 V, V
= –10 V, I
= 0 V,
= –16 V, V
= 12 V,
= –12 V, V
= V
= –4.5 V, I
= –2.5 V,
= –4.5 V, I
= –4.5 V, V
= –5 V,
= –10 V, I
= –4.5 V, R
= –4.5 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
I
S
I
V
I
I
D
D
D
D
D
D
= –1.5 A
D
GS
DS
DS
DS
GS
I
= –4.2,T
= –250 µA
= –250 µA
= –4.2 A
= –4.2 A
GEN
= –4.2 A,
D
= –1 A,
= 0 V
= 0 V
= –5 V
= 0 V
= –3.3 A
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min Typ Max Units
–0.6
–20
–8
b)
110°C/W when mounted
on a minimum pad of 2 oz
copper.
–1.1
–0.7
585
780
pF
124
170
pF
–18
1.1
1.2
61
95
pF
10
17
10
54
91
72
11
16
13
9
3
4
–100
–1.5
–1.2
100
120
100
–1
70
20
18
30
20
6
FDJ129P Rev G (W)
mV/°C
mV/°C
mΩ
µA
nA
nA
nC
nC
nC
nS
nC
ns
ns
ns
ns
V
V
A
S
V