IRFZ44N,127 NXP Semiconductors, IRFZ44N,127 Datasheet

MOSFET N-CH 55V 49A SOT78

IRFZ44N,127

Manufacturer Part Number
IRFZ44N,127
Description
MOSFET N-CH 55V 49A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.IRFZ44N127.pdf (8 pages)

Specifications of IRFZ44N,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055538127
IRFZ44NP
IRFZ44NP
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in switched mode
power supplies and general purpose
switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
February 1999
N-channel enhancement mode
TrenchMOS
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
TM
transistor
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
in free air
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 10 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
110
175
55
49
22
MAX.
MAX.
MAX.
160
110
175
1.4
55
55
20
49
35
2
-
d
s
IRFZ44N
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

Related parts for IRFZ44N,127

Image
Part Number
Description
Manufacturer
Datasheet
Request R
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
BUK714R1-40BT
Part Number:
BUK714R1-40BT
Description:
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer:
NXP Semiconductors
Datasheet:
BUK714R1-40BT.pdf (13 pages)

IRFZ44N,127 Summary of contents

Page 1

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection ...

Page 2

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor STATIC CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) I Zero gate voltage drain current DSS I Gate source leakage ...

Page 3

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor AVALANCHE LIMITING VALUE SYMBOL PARAMETER W Drain-source non-repetitive DSS unclamped inductive turn-off energy Normalised Power Derating PD% 120 110 100 ...

Page 4

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor 100 16 9 ID/A 8 VDS/V Fig.5. Typical output characteristics f(V ); parameter RDS(ON)/mOhm 40 VGS/V ...

Page 5

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor 1E-01 1E-02 2% typ 1E-03 1E-04 1E-05 1E- Fig.11. Sub-threshold drain current f(V ; conditions ˚ GS) j 2.5 2 1.5 1 ...

Page 6

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor RD VGS RG 0 Fig.17. Switching test circuit. February 1999 VDD + VDS - T.U.T. 6 Product specification IRFZ44N Rev 1.000 ...

Page 7

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor MECHANICAL DATA Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. ...

Page 8

Philips Semiconductors N-channel enhancement mode TM TrenchMOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product ...

Related keywords