IRFZ44N,127 NXP Semiconductors, IRFZ44N,127 Datasheet - Page 5

• Manufacturer Part Number: IRFZ44N,127
• Description: MOSFET N-CH 55V 49A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFZ44N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055538127; IRFZ44NP; IRFZ44NP

Philips Semiconductors
February 1999
N-channel enhancement mode
TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
VGS/V
V
2.5
1.5
.5
2
1
0
GS
0.01
Fig.12. Typical capacitances, C
12
10
I
C = f(V
8
6
4
2
0
D
0
= f(Q
0
= f(V
Fig.11. Sub-threshold drain current.
G
GS)
DS
); conditions: I
); conditions: V
; conditions: T
10
1
0.1
TM
transistor
2%
20
2
VDS = 14V
QG/nC
1
D
= 50 A; parameter V
j
GS
= 25 ˚C; V
typ
VDS/V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
30
3
iss
10
VDS = 44V
, C
98%
DS
40
oss
4
= V
, C
GS
rss
100
.
Coss
DS
Crss
Ciss
50
5
5
VGS
0
IF/A
I
Fig.15. Normalised avalanche energy rating.
F
100
120
110
100
80
60
40
20
= f(V
90
80
70
60
50
40
30
20
10
0
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
0.2
40
); conditions: V
% = f(T
RGS
0.5 LI
60
0.4
Tj/C =
mb
80
); conditions: I
D
2
0.6
BV
VSDS/V
Tmb / C
100
175
GS
DSS
L
0.8
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
DSS
140
D
1
shunt
= 49 A
R 01
25
V
DD
IRFZ44N
160
-
+
1.2
Rev 1.000
-ID/100
180
VDD
1.4
j