IRFZ44N,127 NXP Semiconductors, IRFZ44N,127 Datasheet - Page 3

• Manufacturer Part Number: IRFZ44N,127
• Description: MOSFET N-CH 55V 49A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFZ44N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055538127; IRFZ44NP; IRFZ44NP

Philips Semiconductors
AVALANCHE LIMITING VALUE
February 1999
N-channel enhancement mode
TrenchMOS
SYMBOL PARAMETER
W
ID% = 100 I
DSS
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
TM
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
mb
D
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
10 V
= 45 A; V
= 10 V; R
3
DD
GS
25 V;
= 50 ; T
ID/A
1000
100
I
0.001
10
D
0.01
1
0.1
& I
10
1
Fig.3. Safe operating area. T
1
Fig.4. Transient thermal impedance.
Zth/(K/W)
DM
0.5
0.2
0.1
0.05
0.02
0
RDS(ON) =VDS/ID
1E-06
mb
Z
= f(V
th j-mb
= 25 ˚C
DS
= f(t); parameter D = t
); I
0.0001
DM
DC
MIN.
single pulse; parameter t
-
10
0.01
t/s
TYP.
P
D
-
Product specification
VDS/V
t
p
mb
T
1
MAX.
= 25 ˚C
p
D =
/T
110
IRFZ44N
T
t
p
t
Rev 1.000
10ms
tp =
1 us
10us
100 us
1 ms
100ms
100
UNIT
100
mJ
p