IRFZ44R Vishay, IRFZ44R Datasheet

MOSFET N-CH 60V 50A TO-220AB

IRFZ44R

Manufacturer Part Number
IRFZ44R
Description
MOSFET N-CH 60V 50A TO-220AB
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRFZ44R

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ44R

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ44R
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFZ44R
Manufacturer:
IR
Quantity:
16 816
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Part Number:
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IRFZ44RPBF
Quantity:
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www.irf.com
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
I
I
I
P
V
E
dv/dt
T
T
R
R
R
D
D
DM
J
STG
D
GS
AS
@ T
@ T
JC
CS
JA
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ44
for Linear/Audio Applications
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
300 (1.6mm from case )
10 lbf•in (1.1 N•m)
Typ.
0.50
–––
–––
-55 to + 175
HEXFET
Max.
200
150
±20
100
50*
1.0
4.5
S
36
D
TO-220AB
®
IRFZ44R
R
Power MOSFET
DS(on)
Max.
V
–––
1.0
62
I
DSS
D
= 50*A
= 0.028
= 60V
PD - 93956
Units
W/°C
V/ns
mJ
°C
W
A
V
Units
°C/W
1
8/24/00

Related parts for IRFZ44R

IRFZ44R Summary of contents

Page 1

... GS @ 10V 36 GS 200 150 1.0 ±20 100 4.5 - 175 300 (1.6mm from case ) 10 lbf•in (1.1 N•m) Typ. ––– 0.50 ––– 93956 IRFZ44R ® Power MOSFET V = 60V DSS R = 0.028 DS(on 50*A D Units A W W/° V/ns °C Max ...

Page 2

... IRFZ44R Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRFZ44R Fig 2. Typical Output Characteristics 2.5  51A 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 180 T , Junction Temperature ( C) J Fig 4. Normalized On-Resistance Vs. Temperature  V = 10V GS ° 3 ...

Page 4

... IRFZ44R Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Fig 7. Typical Source-Drain Diode Forward Voltage Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000  OPERATION IN THIS AREA LIMITED BY R DS(on) 100  1 00us  0ms  ° ° 175 C J Single Pulse 100 ...

Page 5

... Fig 10a. Switching Time Test Circuit Fig 10a. Switching Time Test Circuit 90% 90% 150 175 ° 10% 10 d(on) d(on) Fig 10b. Switching Time Waveforms Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFZ44R D.U.T. D.U. µs µ d(off) d(off ...

Page 6

... IRFZ44R 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 250 200 150 + - 100 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit  I D TOP 21A ...

Page 7

... Ground Plane ƒ Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% IRFZ44R + =10V * ...

Page 8

... IRFZ44R Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (. 14.09 (.55 5) 13.47 (. .40 (.0 55 .15 (.0 45) 2.54 (.100 & 14. 982 LLIN Part Marking Information TO-220AB ITH WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K& ...

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