IRFZ44N,127 NXP Semiconductors, IRFZ44N,127 Datasheet - Page 4

• Manufacturer Part Number: IRFZ44N,127
• Description: MOSFET N-CH 55V 49A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFZ44N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055538127; IRFZ44NP; IRFZ44NP

Philips Semiconductors
February 1999
N-channel enhancement mode
TrenchMOS
ID/A
Fig.5. Typical output characteristics, T
100
I
ID/A
D
80
60
40
20
Fig.6. Typical on-state resistance, T
40
35
30
25
20
15
10
100
0
= f(V
80
60
40
20
0
0
0
RDS(ON)/mOhm
VGS/V =
16
10
0
Fig.7. Typical transfer characteristics.
GS
10
) ; conditions: V
R
2
I
2
6
DS(ON)
D
20
Tj/C =
= f(V
TM
30
= f(I
transistor
6.5
9
8.5
DS
4
175
4
); parameter V
D
40
); parameter V
VDS/V
7
ID/A
VGS/V
DS
6
50
25
= 25 V; parameter T
6
VGS/V =
60
8
GS
8
70
GS
8
j
j
= 25 ˚C .
10
= 25 ˚C .
80
9
10
90
10
12
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
j
4
Fig.9. Normalised drain-source on-state resistance.
a = R
gfs/S
V
Fig.8. Typical transconductance, T
30
25
20
15
10
2.5
1.5
0.5
-100
5
4
3
2
1
0
5
0
GS(TO)
-100
2
1
0
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
/R
-50
= f(I
20
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Tmb / degC
40
= f(T
Tj / C
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
D
= 1 mA; V
60
100
= 25 A; V
100
DS
Product specification
= 25 V
150
BUK759-60
150
j
80
IRFZ44N
= 25 ˚C .
DS
GS
= V
= 10 V
Rev 1.000
200
200
GS
100