IRFZ48V International Rectifier, IRFZ48V Datasheet

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IRFZ48V

Manufacturer Part Number
IRFZ48V
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet

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www.irf.com
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
TO-220AB
Max.
290
150
± 20
166
1.0
5.3
72
51
72
15
®
IRFZ48V
R
Power MOSFET
DS(on)
Max.
V
–––
1.0
62
DSS
I
D
= 72A
PD - 93959A
= 60V
= 12m
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
3/25/01

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IRFZ48V Summary of contents

Page 1

... Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G @ 10V GS @ 10V GS  ‚   ƒ 300 (1.6mm from case ) Typ. 0. 93959A IRFZ48V ® HEXFET Power MOSFET 60V DSS R = 12m DS(on 72A D S TO-220AB Max. Units 290 150 W 1 ...

Page 2

... IRFZ48V Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 100 10 ° 1 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 ° 2.0 1.5 1.0 0.5 = 25V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFZ48V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 72A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRFZ48V 4000 0V SHORTED C rss = oss = 3000 Ciss 2000 1000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... d(on) d(on) Fig 10b. Switching Time Waveforms Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFZ48V D.U.T. D.U. µs µ d(off) ...

Page 6

... IRFZ48V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 400 300 ...

Page 7

... Ground Plane ƒ Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% IRFZ48V + =10V * ...

Page 8

... IRFZ48V Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (. 14.09 (.55 5) 13.47 (. .40 (.0 55 .15 (.0 45) 2.54 (.100 & 14. 982. ...

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