IRFZ44E International Rectifier, IRFZ44E Datasheet

MOSFET N-CH 60V 48A TO-220AB

IRFZ44E

Manufacturer Part Number
IRFZ44E
Description
MOSFET N-CH 60V 48A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFZ44E

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 29A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1360pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ44E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ44E
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFZ44E
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFZ44EL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFZ44ELPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFZ44EPBF
Manufacturer:
IR
Quantity:
1 250
Description
www.irf.com
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
Max.
0.71
192
110
± 20
220
5.0
48
34
29
11
®
IRFZ44E
R
Power MOSFET
DS(on)
Max.
V
–––
1.4
62
DSS
I
D
TO-220AB
= 48A
PD - 91671B
= 0.023
= 60V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
7/6/99

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IRFZ44E Summary of contents

Page 1

... R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G @ 10V GS @ 10V GS  … ‚   ƒ 300 (1.6mm from case ) Typ. 0. 91671B IRFZ44E ® HEXFET Power MOSFET 60V DSS R = 0.023 DS(on 48A D S TO-220AB Max. Units 192 110 W 0.71 W/°C ± ...

Page 2

... IRFZ44E Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 2.0 ° 1.5 ° 175 C J 1.0 0.5 = 25V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFZ44E VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 175 C ° Drain-to-Source Voltage (V) DS 48A V = ...

Page 4

... IRFZ44E 2500 1MHz iss rss 2000 oss iss 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 10a. Switching Time Test Circuit Fig 10a. Switching Time Test Circuit 90% 90% 150 175 150 175 ° 10% 10% ° Fig 10b. Switching Time Waveforms Fig 10b. Switching Time Waveforms 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFZ44E D.U.T. D.U. µs µ d(on) d(on) r ...

Page 6

... IRFZ44E 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 500 400 300 + - 200 100 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP ...

Page 7

... Ground Plane ƒ Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% IRFZ44E + =10V * ...

Page 8

... IRFZ44E Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (. 14.09 (.55 5) 13.47 (. .40 (.0 55 .15 (.0 45) 2.54 (.100 & 14. 982 LLIN Part Marking Information TO-220AB ITH WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR FAR EAST: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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