2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet - Page 9

• Manufacturer Part Number: 2N7002P,215
• Description: MOSFET N-CH SGL 60V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002P,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.36 A
• Power Dissipation: 420 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064132215

NXP Semiconductors
8. Test information
2N7002P
Product data sheet
Fig 17. Duty cycle definition
All information provided in this document is subject to legal disclaimers.
P
Rev. 02 — 29 July 2010
t
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t
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duty cycle δ =
006aaa812
t
t
t
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60 V, 360 mA N-channel Trench MOSFET
2N7002P
© NXP B.V. 2010. All rights reserved.
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