2N7002,215 NXP Semiconductors, 2N7002,215 Datasheet

2N7002,215

Manufacturer Part Number

2N7002,215

Description

MOSFET N-CH 60V 300MA SOT-23

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Type

Power MOSFETr

Datasheet

1.2N7002215.pdf (11 pages)

Specifications of 2N7002,215

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

300mA

Vgs(th) (max) @ Id

2.5V @ 250µA

Input Capacitance (ciss) @ Vds

50pF @ 10V

Power - Max

830mW

Mounting Type

Surface Mount

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

5 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

0.3 A

Power Dissipation

830 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

5Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±30V

Drain Current (max)

300mA

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

TO-236AB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

2N7002 T/R
568-1369-2
934003470215

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

2N7002,215

Quantity:

10 000

Current page: 1 of 11
Download datasheet (88Kb)

1. Product proﬁle

2. Pinning information

Table 1:

Description

gate (G)

source (S)

drain (D)

Pinning

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

2N7002

N-channel TrenchMOS FET

Rev. 06 — 28 April 2006

Logic level threshold compatible

Surface-mounted package

Logic level translator

DSon

Simpliﬁed outline

60 V

SOT23

Very fast switching

TrenchMOS technology

High-speed line driver

tot

300 mA

0.83 W

Product data sheet

Symbol

mbb076

Related parts for 2N7002,215

2N7002,215 Summary of contents

Page 1

N-channel TrenchMOS FET Rev. 06 — 28 April 2006 1. Product proﬁle 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Surface-mounted package 1.3 Applications Logic ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name 2N7002 TO-236AB 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ------------------------ 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) R thermal resistance from junction to ambient th(j-a) Mounted on a printed-circuit board; minimum footprint; vertical in still air [1] ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise speciﬁed. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R ...

Page 6

Philips Semiconductors (A) 0.8 0.6 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values (A) 0.8 0.6 0.4 ...

Page 7

Philips Semiconductors 3 V max GS(th) (V) typ 2 min 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature (A) ...

Page 8

Philips Semiconductors 7. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 13. ...

Page 9

Philips Semiconductors 8. Revision history Table 6: Revision history Document ID Release date 2N7002_6 20060428 • Modiﬁcations: Table 5 • Table 5 • Table 5 • Figure 2N7002_5 20051115 2N7002_4 20050426 2N7002-03 20000727 2N7002_2 19970617 2N7002_1 19901031 2N7002_6 Product data ...

Page 10

Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualiﬁcation III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 11

Philips Semiconductors 14. Contents 1 Product proﬁ 1.1 General description ...

Related keywords

2n7002
2n7000
2n7002k
2n7002t
2n7002e
2n7002w
2n7002lt1
2n7002lt1g
2N7002,215 datasheet
2N7002,215 data sheet
2N7002,215 pdf datasheet
2N7002,215 component
2N7002,215 part
2N7002,215 distributor
2N7002,215 RoHS
2N7002,215 datasheet download