2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet - Page 8

• Manufacturer Part Number: 2N7002P,215
• Description: MOSFET N-CH SGL 60V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002P,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.36 A
• Power Dissipation: 420 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064132215

NXP Semiconductors
2N7002P
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5.0
4.0
3.0
2.0
1.0
0.0
0.0
charge; typical values
I
V
(1) T
(2) T
D
GS
= 300 mA; V
= 0 V
amb
amb
= 150 °C
= 25 °C
0.2
DS
= 30 V; T
0.4
(A)
amb
I
S
1.2
0.8
0.4
0.0
0.6
0.0
= 25 °C
All information provided in this document is subject to legal disclaimers.
Q
017aaa025
G
(nC)
0.8
Rev. 02 — 29 July 2010
0.4
Fig 15. Gate charge waveform definitions
(1)
0.8
V
(2)
V
SD
V
V
V
GS(pl)
017aaa026
DS
GS(th)
GS
60 V, 360 mA N-channel Trench MOSFET
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
2N7002P
© NXP B.V. 2010. All rights reserved.
003aaa508
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