2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet - Page 3

MOSFET N-CH SGL 60V SOT-23

2N7002P,215

Manufacturer Part Number
2N7002P,215
Description
MOSFET N-CH SGL 60V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N7002P,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Vgs(th) (max) @ Id
2.4V @ 250µA
Current - Continuous Drain (id) @ 25° C
300mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohm @ 10 V
Gate Charge Qg
0.6 nC
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.36 A
Power Dissipation
420 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064132215

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002P,215
Manufacturer:
NXP Semiconductors
Quantity:
12 000
Part Number:
2N7002P,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
[2]
2N7002P
Product data sheet
Fig 1.
Fig 3.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
P
(%)
(A)
I
10
10
10
der
D
120
10
80
40
−1
−2
−3
1
0
10
−75
function of ambient temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) t
(4) t
(5) DC; T
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
−1
= single pulse
p
p
p
p
= 100 μs
= 1 ms
= 10 ms
= 100 ms
−25
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
25
75
125
All information provided in this document is subject to legal disclaimers.
T
017aaa001
amb
1
(°C)
175
Rev. 02 — 29 July 2010
2
Fig 2.
I
(%)
der
120
80
40
0
−75
function of ambient temperature
Normalized continuous drain current as a
60 V, 360 mA N-channel Trench MOSFET
10
−25
25
V
DS
75
(V)
2N7002P
© NXP B.V. 2010. All rights reserved.
125
T
017aaa002
017aaa014
amb
(1)
(2)
(3)
(4)
(5)
(6)
(°C)
175
10
2
3 of 15

Related parts for 2N7002P,215