2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet - Page 6

• Manufacturer Part Number: 2N7002P,215
• Description: MOSFET N-CH SGL 60V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002P,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.36 A
• Power Dissipation: 420 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064132215

NXP Semiconductors
2N7002P
Product data sheet
Fig 6.
Fig 8.
R
(A)
DSon
(Ω)
I
D
10.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
7.5
5.0
2.5
0.0
0.0
0.0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
Drain-source on-state resistance as a function
V
amb
amb
GS
GS
GS
GS
GS
GS
= 4.0 V
= 25 °C
= 25 °C
0.2
= 3.25 V
= 3.5 V
= 4 V
= 5 V
= 10 V
1.0
0.4
2.0
(1)
0.6
(2)
3.25 V
2.75 V
3.5 V
3.0 V
2.5 V
3.0
(3)
(5)
0.8
All information provided in this document is subject to legal disclaimers.
V
017aaa017
017aaa019
DS
I
D
(V)
(A)
(4)
4.0
1.0
Rev. 02 — 29 July 2010
Fig 7.
Fig 9.
R
DSon
(Ω)
(A)
I
10
10
10
10
D
6.0
4.0
2.0
0.0
−3
−4
−5
−6
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
amb
= 500 mA
60 V, 360 mA N-channel Trench MOSFET
amb
amb
= 25 °C; V
2.0
= 150 °C
= 25 °C
1
(1)
DS
4.0
= 5 V
(2)
6.0
(1)
(2)
2
2N7002P
V
© NXP B.V. 2010. All rights reserved.
8.0
(3)
GS
017aaa018
017aaa020
V
(V)
GS
(V)
10.0
3
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