IRFP460C Fairchild Semiconductor, IRFP460C Datasheet - Page 4

• Manufacturer Part Number: IRFP460C
• Description: MOSFET N-CH 500V 20A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of IRFP460C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 235W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 235000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
Operation in This Area
is Limited by R
T
V
vs Temperature
J
, Junction Temperature [
DS
10
0
, Drain-Source Voltage [V]
1 0
1 0
1
1 0
※ Notes :
DS(on)
1. T
2. T
3. Single Pulse
- 1
- 2
0
1 0
C
J
= 150
- 5
= 25
0 . 0 2
D = 0 .5
0 . 0 1
0 . 0 5
50
0 . 2
0 . 1
o
C
o
C
s i n g l e p u ls e
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
(Continued)
1 0
10
o
2
C]
1 ms
- 4
※ Notes :
1. V
2. I
100 s
D
t
G S
= 250 μ A
1
= 0 V
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
150
10 s
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
20
15
10
5
0
-100
25
Figure 10. Maximum Drain Current
※ N o te s :
1 0
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
P
- 1
DM
DM
-50
θ J C
J M
50
- T
(t) = 0 .5 3 ℃ /W M a x .
C
vs Case Temperature
= P
t
t
t
1
1
1
T
t
t
t
T
J
, Junction Temperature [
vs Temperature
D M
2
2
2
C
0
1 0
, Case Temperature [ ℃ ]
* Z
0
75
1
θ J C
/t
2
(t)
50
100
Dimensions in Millimeters
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 20.0 A
= 10 V
Rev. A, February 2002
200
150