IRFP460C Fairchild Semiconductor, IRFP460C Datasheet - Page 3

• Manufacturer Part Number: IRFP460C
• Description: MOSFET N-CH 500V 20A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of IRFP460C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 235W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 235000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10000
8000
6000
4000
2000
10
1.0
0.8
0.6
0.4
0.2
0.0
-1
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
20
V
V
DS
DS
30
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
C
C
40
C
oss
rss
iss
V
GS
50
= 10V
※ Notes :
1. V
2. f = 1 MHz
60
GS
C
C
C
※ Notes :
iss
oss
rss
= 0 V
1. 250 μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
1
C
70
gs
gd
ds
= 25 ℃
+ C
+ C
V
gd
GS
gd
(C
J
= 20V
ds
= 25℃
80
= shorted)
90
10
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
2
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
150
Figure 2. Transfer Characteristics
o
C
o
C
0.4
Variation with Source Current
150℃
30
4
0.6
V
V
and Temperature
Q
GS
SD
V
DS
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
25℃
, Total Gate Charge [nC]
-55
= 400V
V
o
60
C
DS
0.8
= 250V
V
DS
6
= 100V
1.0
90
Dimensions in Millimeters
※ Notes :
1.2
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
120
= 0V
D
1.4
= 20.0 A
Rev. A, February 2002
1.6
150
10