IRFP460C Fairchild Semiconductor, IRFP460C Datasheet - Page 2
![MOSFET N-CH 500V 20A TO-3P](/photos/26/98/269851/to3p_sml.jpg)
IRFP460C
Manufacturer Part Number
IRFP460C
Description
MOSFET N-CH 500V 20A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.IRFP460C.pdf
(8 pages)
Specifications of IRFP460C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
235W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
235000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP460C
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFP460C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.1mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 20A, di/dt ≤ 200A/ s, V
DSS
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 20A, V
DD
= 50V, R
DD
Parameter
≤ BV
G
= 25
DSS,
Starting T
Starting T
J
J
= 25°C
T
= 25°C
C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 500 V, V
= 400 V, T
= V
= 50 V, I
= 25 V, V
= 400 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 250 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
D
= 250 A
= 20 A
= 20 A,
GS
DS
D
D
= 250 A
DS
= 10.0 A
GS
C
= 10.0 A
= 20 A,
= 20 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
500
2.0
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4590
0.55
Typ
380
150
380
180
130
480
0.2
7.7
18
60
50
20
45
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6000
-100
Max
0.24
100
100
460
120
310
770
370
170
4.0
1.4
10
80
20
80
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Rev. A, February 2002
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
C
A
A