FQA36P15 Fairchild Semiconductor, FQA36P15 Datasheet - Page 4

• Manufacturer Part Number: FQA36P15
• Description: MOSFET P-CH 150V 36A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA36P15

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 25V
• Power - Max: 294W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19.5 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 294000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA36P15 / FQA36P15_F109 Rev. B2
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
-1
3
2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
vs. Temperature
Operation in This Area
is Limited by R
-50
-V
T
DS
J
, Junction Temperature [
, Drain-Source Voltage [V]
1 0
1 0
DS(on)
1 0
0
※
-1
-2
1 0
0
1. T
2. T
3. Single Pulse
Notes :
10
-5
C
J
1
= 175
= 25
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .1
0 .0 5
o
50
C
o
C
DC
10 ms
1 0
s in g le p u ls e
100
-4
o
t
C]
1
1 ms
※
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
1. V
2. I
Notes :
D
GS
= -250 µ A
150
= 0 V
100
10
1 0
2
µ
s
-3
(Continued)
200
4
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
-100
5
0
25
1 0
P
※
vs. Temperature
-1
DM
vs. Case Temperature
1 . Z
2 . D u ty F a c to r , D = t
3 . T
N o te s :
-50
50
θ J C
J M
( t) = 0 .5 1
- T
t
1
C
t
T
2
= P
J
T
, Junction Temperature [
1 0
C
0
75
, Case Temperature [ ]
D M
0
℃
* Z
/W M a x .
1
/t
θ J C
2
( t)
50
100
1 0
1
100
125
℃
o
C]
※
1. V
2. I
Notes :
150
150
D
GS
= -18 A
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= -10 V
200
175