FQA36P15 Fairchild Semiconductor, FQA36P15 Datasheet - Page 4
![MOSFET P-CH 150V 36A TO-3P](/photos/26/98/269851/to3p_sml.jpg)
FQA36P15
Manufacturer Part Number
FQA36P15
Description
MOSFET P-CH 150V 36A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQA36P15.pdf
(8 pages)
Specifications of FQA36P15
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3320pF @ 25V
Power - Max
294W
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
19.5 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
294000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQA36P15
Manufacturer:
FSC
Quantity:
5 000
Company:
Part Number:
FQA36P15
Manufacturer:
FSC
Quantity:
86 755
FQA36P15 / FQA36P15_F109 Rev. B2
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
-1
3
2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
vs. Temperature
Operation in This Area
is Limited by R
-50
-V
T
DS
J
, Junction Temperature [
, Drain-Source Voltage [V]
1 0
1 0
DS(on)
1 0
0
※
-1
-2
1 0
0
1. T
2. T
3. Single Pulse
Notes :
10
-5
C
J
1
= 175
= 25
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .1
0 .0 5
o
50
C
o
C
DC
10 ms
1 0
s in g le p u ls e
100
-4
o
t
C]
1
1 ms
※
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
1. V
2. I
Notes :
D
GS
= -250 µ A
150
= 0 V
100
10
1 0
2
µ
s
-3
(Continued)
200
4
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
-100
5
0
25
1 0
P
※
vs. Temperature
-1
DM
vs. Case Temperature
1 . Z
2 . D u ty F a c to r , D = t
3 . T
N o te s :
-50
50
θ J C
J M
( t) = 0 .5 1
- T
t
1
C
t
T
2
= P
J
T
, Junction Temperature [
1 0
C
0
75
, Case Temperature [ ]
D M
0
℃
* Z
/W M a x .
1
/t
θ J C
2
( t)
50
100
1 0
1
100
125
℃
o
C]
※
1. V
2. I
Notes :
150
150
D
GS
= -18 A
www.fairchildsemi.com
= -10 V
200
175