FQA36P15 Fairchild Semiconductor, FQA36P15 Datasheet - Page 2

• Manufacturer Part Number: FQA36P15
• Description: MOSFET P-CH 150V 36A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA36P15

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 25V
• Power - Max: 294W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19.5 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 294000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA36P15 / FQA36P15_F109 Rev. B2
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.45mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
≤ -36A, di/dt ≤300A/µs, V
DSS
FQA36P15
FQA36P15
/
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
=-36A, V
DD
= -50V, R
DD
FQA36P15_F109
≤ BV
FQA36P15
Device
Parameter
DSS,
G
= 25 Ω, Starting T
Starting T
J
= 25°C
T
C
= 25°C unless otherwise noted
J
= 25°C
Package
TO-3PN
TO-3PN
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= -150 V, V
= -120 V, T
= V
= -40 V, I
= -25 V, V
= -120 V, I
= 0 V, I
= -25 V, V
= 25 V, V
= -10 V, I
= -75 V, I
= -10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
Reel Size
, I
D
S
S
D
=-36A
= -36 A,
= -250 µA
D
D
D
DS
= -250 µA
GS
DS
D
C
= -18A
= -18A
= -36A,
GS
--
--
= -36A,
= 0 V
= 150°C
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
-150
-2.0
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0.076
-0.13
2550
Typ
1.45
19.5
710
110
350
155
150
198
50
81
19
42
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Quantity
Max Units
3320
-100
-100
-144
0.09
-4.0
-4.0
100
920
140
110
710
320
310
105
-10
-36
www.fairchildsemi.com
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30
30
V/°C
µA
µA
nA
nA
pF
nC
nC
nC
µC
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V