FQA36P15 Fairchild Semiconductor, FQA36P15 Datasheet - Page 3

• Manufacturer Part Number: FQA36P15
• Description: MOSFET P-CH 150V 36A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA36P15

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 25V
• Power - Max: 294W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19.5 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 294000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA36P15 / FQA36P15_F109 Rev. B2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
8000
7000
6000
5000
4000
3000
2000
1000
10
10
10
10
-1
0.4
0.3
0.2
0.1
0.0
2
1
0
10
0
10
-1
0
Top :
Bottom : -4.5 V
-1
Drain Current and Gate Voltage
-15.0 V
-10.0 V
20
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
V
C
GS
oss
C
iss
-V
40
-V
DS
C
DS
rss
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
10
10
60
D
0
, Drain Current [A]
0
80
V
GS
= -10V
100
C
C
C
iss
oss
rss
※
= C
= C
= C
10
120
1. 250µ s Pulse Test
2. T
10
※
Notes :
gs
1
gd
ds
1
C
Note : T
+ C
+ C
= 25 ℃
V
gd
gd
GS
(C
※
140
J
1. V
2. f = 1 MHz
= -20V
ds
= 25 ℃
Note ;
= shorted)
GS
= 0 V
160
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
-1
10
10
10
10
14
12
10
2
1
0
8
6
4
2
0
2
-1
2
1
0
0.0
0
Variation vs. Source Current
and Temperatue
25
175 ℃
10
o
0.5
C
175
o
25 ℃
20
4
C
1.0
-V
-V
GS
Q
, Gate-Source Voltage [V]
SD
G
, Source-Drain voltage [V]
30
, Total Gate Charge [nC]
1.5
-55
V
DS
o
40
C
6
= -120V
2.0
V
DS
V
= -75V
DS
50
= -30V
2.5
※
60
1. V
2. 250µ s Pulse Test
※
Notes :
8
1. V
2. 250µ s Pulse Test
3.0
DS
Notes :
= -40V
GS
※
= 0V
Note : I
70
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3.5
D
= -36A
80
10
4.0
90