RFD16N05LSM Fairchild Semiconductor, RFD16N05LSM Datasheet - Page 6

• Manufacturer Part Number: RFD16N05LSM
• Description: MOSFET N-CH 50V 16A TO-252AA
• Manufacturer: Fairchild Semiconductor

Specifications of RFD16N05LSM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 16A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2V @ 250mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 5 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 16 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PSPICE Electrical Model
.SUBCKT RFD16N05L 2 1 3 ; REV 4/8/92
Ca 12 8 3.33e-9
Cb 15 14 3.11e-9
Cin 6 8 1.21e-9
Dbody 7 5 DBDMOD
Dbreak 5 11 DBKMOD
Dplcap 10 5 DPLCAPMOD
Ebreak 11 7 17 18 70.9
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evto 20 6 18 8 1
IT 8 17 1
Lgate 1 9 1.38e-9
Ldrain 2 5 1.0e-12
Lsource 3 7 1.0e-9
Mos1 16 6 8 8 MOSMOD M=0.99
Mos2 16 21 8 8 MOSMOD M=0.01
Rin 6 8 1e9
Rbreak 17 18 RBKMOD 1
Rdrain 5 16 RDSMOD 27.38e-3
Rgate 9 20 2.98
Rsource 8 7 RDSMOD 0.614e-3
Rvto 18 19 RVTOMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 8 19 DC 1
Vto 21 6 0.448
.MODEL DBDMOD D (IS=1.34e-13 RS=1.21e-2 TRS1=1.64e-3 TRS2=2.59e-6
+CJO=1.13e-9 TT=4.14e-8)
.MODEL DBKMOD D (RS=8.82e-2 TRS1=-2.01e-3 TRS2=7.32e-10)
.MODEL DPLCAPMOD D (CJO=0.522e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=2.054 KP=24.73 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.01e-3 TC2=5.21e-8)
.MODEL RDSMOD RES (TC1=3.66e-3 TC2=1.46e-5)
.MODEL RVTOMOD RES (TC1=-1.81e-3 TC2=1.41e-6)
.MODEL S1AMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=-4.25 VOFF=-2.25)
.MODEL S1BMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=-2.25 VOFF=-4.25)
.MODEL S2AMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=-0.65 VOFF=4.35)
.MODEL S2BMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=4.35 VOFF=-0.65)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
©2003 Fairchild Semiconductor Corporation
GATE
1
LGATE
9
RGATE
20
12
+
CA
EVTO
S1A
S1B
ESG
18
8
EGS
13
8
10
-
+
-
6
8
+
RIN
-
6
8
6
RSCL2
14
13
S2A
S2B
13
DPLCAP
VTO
15
EDS
CB
CIN
+
+
-
16
5
8
51
5
5
14
+
MOS1
50
RDRAIN
51
RSCL1
21
ESCL
8
RSOURCE
DBREAK
EBREAK
MOS2
11
17
17
18
RFD16N05L, RFD16N05LSM Rev. B1
+
RBREAK
-
7
IT
LSOURCE
LDRAIN
DBODY
18
19
+
RVTO
VBAT
SOURCE
DRAIN
2
3