RFD16N05LSM Fairchild Semiconductor, RFD16N05LSM Datasheet - Page 4
![MOSFET N-CH 50V 16A TO-252AA](/photos/5/58/55822/rfd16n05lsm_sml.jpg)
RFD16N05LSM
Manufacturer Part Number
RFD16N05LSM
Description
MOSFET N-CH 50V 16A TO-252AA
Manufacturer
Fairchild Semiconductor
Datasheet
1.RFD16N05LSM9A.pdf
(7 pages)
Specifications of RFD16N05LSM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 16A, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2V @ 250mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohm @ 5 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
16 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RFD16N05LSM
Manufacturer:
FSC
Quantity:
4 249
Part Number:
RFD16N05LSM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RFD16N05LSM9A
Manufacturer:
FSC
Quantity:
21 000
Part Number:
RFD16N05LSM9A
Manufacturer:
HAR
Quantity:
20 000
Part Number:
RFD16N05LSM9ACT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
FIGURE 9. NORMALIZED GATE THRESHOLD vs JUNCTION
2000
1600
1200
800
400
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
-50
4
0
V
I
I
V
D
GS
D
DS
= 250 A
= 16V
= V
VOLTAGE AND DRAIN CURRENT
TEMPERATURE
= 15V
DS
V
0
5
V
T
DS,
GS
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
5
50
10
C
C
C
ISS
RSS
OSS
= C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX.
= C
100
GS
15
C
GD
DS
+ C
Unless Otherwise Specified (Continued)
+ C
6
GD
GD
o
C)
150
20
V
f = 1MHz
GS
C
C
C
ISS
RSS
OSS
= 0V
200
25
7
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
12.5
37.5
50
2.5
2.0
1.5
1.0
0.5
25
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
-50
I
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX.
D
I
D
= 16A
V
= 250 A
DD
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
20
CONSTANT GATE CURRENT
= BV
I G REF
------------------------ -
I G ACT
0
0
T
T
J
DSS
DRAIN SOURCE VOLTAGE
PLATEAU VOLTAGES IN
DESCENDING ORDER:
J
, JUNCTION TEMPERATURE (
R
, JUNCTION TEMPERATURE (
L
I
V
V
V
V
G(REF)
= 3.125
DD
DD
DD
DD
VOLTAGE
t, TIME ( s)
SOURCE
= BV
= 0.75 BV
= 0.50 BV
= 0.25 BV
50
50
GATE
= 0.60mA
DSS
V
GS
RFD16N05L, RFD16N05LSM Rev. B1
DSS
DSS
DSS
= 5V
100
100
V
80
DD
I G REF
------------------------ -
I G ACT
= BV
o
o
C)
DSS
C)
150
150
10
8
6
4
2
0
200
200