RFD16N05LSM Fairchild Semiconductor, RFD16N05LSM Datasheet - Page 5

• Manufacturer Part Number: RFD16N05LSM
• Description: MOSFET N-CH 50V 16A TO-252AA
• Manufacturer: Fairchild Semiconductor

Specifications of RFD16N05LSM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 16A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2V @ 250mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 5 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 16 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Test Circuits and Waveforms
©2003 Fairchild Semiconductor Corporation
BATTERY
VARY t
REQUIRED PEAK I
0V
V
GS
0
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT
12V
P
FIGURE 15. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
FIGURE 17. GATE CHARGE TEST CIRCUIT
V
t
GS
P
0.2 F
AS
I
G(REF)
50k
R
G
R
I
G
G
REGULATOR
SAMPLING
RESISTOR
CURRENT
CURRENT
0.3 F
G
R
L
V
I
AS
DS
DUT
D
S
DUT
0.01
I
SAMPLING
RESISTOR
D
L
CURRENT
SAME TYPE
AS DUT
DUT
V
(ISOLATED
SUPPLY)
DS
+
-
-
+
V
V
V
DD
DS
DD
0
0
0
0
0
V
V
V
DD
GS
DS
10%
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
I
G(REF)
FIGURE 18. GATE CHARGE WAVEFORMS
t
d(ON)
90%
Q
gs
50%
t
ON
10%
t
r
I
AS
PULSE WIDTH
t
Q
P
gd
Q
g(TOT)
V
DS
BV
t
RFD16N05L, RFD16N05LSM Rev. B1
AV
DSS
t
d(OFF)
V
90%
GS
V
t
OFF
DS
50%
t
f
10%
V
90%
DD