HUFA76437P3 Fairchild Semiconductor, HUFA76437P3 Datasheet - Page 7

• Manufacturer Part Number: HUFA76437P3
• Description: MOSFET N-CH 60V 71A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76437P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 71A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 71A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 2230pF @ 25V
• Power - Max: 155W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 64 A
• Power Dissipation: 155 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PSPICE Electrical Model
.SUBCKT HUFA76437 2 1 3 ;
CA 12 8 3.73e-9
CB 15 14 3.73e-9
CIN 6 8 2.08e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 4.0e-9
LGATE 1 9 6.0e-9
LSOURCE 3 7 3.0e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.75e-3
RGATE 9 20 1.0
RLDRAIN 2 5 40
RLGATE 1 9 60
RLSOURCE 3 7 30
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.15e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*200),4))}
.MODEL DBODYMOD D (IS = 1.70e-12 RS = 3.20e-3 TRS1 = 1.75e-3 TRS2 = 1.75e-6 CJO = 2.55e-9 IKF = 13 XTI = 5.2 TT = 7.00e-8 M = 0.47)
.MODEL DBREAKMOD D (RS = 1.70e- 1IKF = 0.1 TRS1 = 2.00e- 3TRS2 = 8.00e-7)
.MODEL DPLCAPMOD D (CJO = 2.00e- 9IS = 1e-3 0 VJ = 1.1 M = 0.83 N = 10)
.MODEL MMEDMOD NMOS (VTO = 2.00 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.0)
.MODEL MSTROMOD NMOS (VTO = 2.42 KP = 128 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.60 KP = 0.01 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 10.0 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.13e- 3TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 1.20e-2 TC2 = 6.00e-5)
.MODEL RSLCMOD RES (TC1 = 2.00e-3 TC2 = 1.00e-6)
.MODEL RSOURCEMOD RES (TC1 = 2.00e-3 TC2 =-1.00e-5)
.MODEL RVTHRESMOD RES (TC1 = -2.50e-3 TC2 = -8.50e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.00e- 3TC2 = 5.00e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.3 VOFF= -2.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -5.3)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.4 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.4)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
1
rev 1 September 1999
RLGATE
LGATE
9
RGATE
CA
12
20
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EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
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-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
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5
MSTRO
+
-
14
51
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RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
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-
17
18
7
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-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
SOURCE
DRAIN
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BUZ1 Rev. B