HUFA76437P3 Fairchild Semiconductor, HUFA76437P3 Datasheet - Page 5

• Manufacturer Part Number: HUFA76437P3
• Description: MOSFET N-CH 60V 71A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76437P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 71A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 71A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 2230pF @ 25V
• Power - Max: 155W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 64 A
• Power Dissipation: 155 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
7000
1000
800
600
400
200
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
100
1.4
1.2
1.0
0.8
0.6
0.4
50
0
0.1
0
-80
V
V
GS
GS
JUNCTION TEMPERATURE
C
= 0V, f = 1MHz
OSS
= 4.5V, V
-40
R
GS
V
10
DS
T
, GATE TO SOURCE RESISTANCE ( )
J
C
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
DS
DD
0
+ C
= 30V, I
1
GD
20
40
D
= 44A
C
RSS
80
30
V
GS
C
C
(Continued)
GD
= V
ISS
120
10
DS
t
o
d(OFF)
C
C)
, I
40
GS
D
160
= 250 A
+ C
t
t
d(ON)
r
GD
t
f
200
60
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
400
300
200
100
10
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
8
6
4
2
0
0
1.2
1.1
1.0
0.9
0
0
-80
V
V
DD
GS
I
D
VOLTAGE vs JUNCTION TEMPERATURE
= 30V
GATE CURRENT
= 10V, V
= 250 A
-40
R
15
GS
10
T
, GATE TO SOURCE RESISTANCE ( )
DD
J
, JUNCTION TEMPERATURE (
Q
= 30V, I
0
g
, GATE CHARGE (nC)
30
20
D
40
= 71A
80
WAVEFORMS IN
DESCENDING ORDER:
45
30
I
I
I
D
D
D
= 64A
= 42A
= 21A
120
t
t
r
f
o
C)
60
40
160
t
d(OFF)
BUZ1 Rev. B
t
d(ON)
200
75
50