HUFA76437P3 Fairchild Semiconductor, HUFA76437P3 Datasheet - Page 3

• Manufacturer Part Number: HUFA76437P3
• Description: MOSFET N-CH 60V 71A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76437P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 71A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 71A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 2230pF @ 25V
• Power - Max: 155W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 64 A
• Power Dissipation: 155 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1000
1.2
1.0
0.8
0.6
0.4
0.2
100
0
0.01
50
0.1
0
10
2
1
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
T
50
C
V
, CASE TEMPERATURE (
GS
= 10V
10
SINGLE PULSE
10
75
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
100
V
GS
= 5V
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
-3
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
CASE TEMPERATURE
50
10
10
-1
-1
T
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE (
75
V
J
GS
= P
= 4.5V
DM
100
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
x Z
I = I
= 25
10
10
25
JC
P
1
V
DM
0
0
o
/t
GS
125
x R
C
2
o
C DERATE PEAK
= 10V
o
JC
C)
175 - T
t
+ T
1
150
t
150
2
C
C
BUZ1 Rev. B
175
10
10
1
1