FDP3682 Fairchild Semiconductor, FDP3682 Datasheet - Page 3

MOSFET N-CH 100V 32A TO-220AB

FDP3682

Manufacturer Part Number
FDP3682
Description
MOSFET N-CH 100V 32A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP3682

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 25V
Power - Max
95W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.036 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
95000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP3682
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDP3682
Manufacturer:
FAIRCHILD
Quantity:
2 118
Part Number:
FDP3682
Manufacturer:
FSC
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDB3682/FDP3682 Rev.B1
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
400
100
30
0
0.01
0.1
1
0
2
10
10
-5
V
GS
-5
25
= 10V
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Ambient Temperature
T
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
SINGLE PULSE
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
75
-4
-4
100
T
C
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
t, RECTANGULAR PULSE DURATION (s)
150
175
t, PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
3
35
30
25
20
15
10
5
0
25
50
V
GS
10
Case Temperature
10
= 10V
T
-1
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
100
C
DM
I = I
= 25
x Z
25
P
DM
o
10
10
C
JC
1
0
0
o
125
/t
C DERATE PEAK
x R
2
175 - T
o
t
150
www.fairchildsemi.com
1
C)
JC
t
2
+ T
C
150
C
10
10
175
1
1

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