FDP3682 Fairchild Semiconductor, FDP3682 Datasheet - Page 2

• Manufacturer Part Number: FDP3682
• Description: MOSFET N-CH 100V 32A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP3682

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDB3682/FDP3682 Rev.B1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDB3682
FDP3682
J
= 25°C, L = 0.27mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
Parameter
= 20A.
FDB3682
FDP3682
Device
T
C
= 25°C unless otherwise noted
(V
GS
TO-263AB
TO-220AB
Package
= 10V)
I
V
V
V
V
I
I
I
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
DS
GS
GS
GS
DS
GS
GS
DD
GS
=32A, V
=32A, V
= 250 A, V
= 16A, V
= 32A
= 16A
= 32A, dI
= 32A, dI
= 0V
= 20V
= 0V to 10V
= 0V to 2V
= 80V
= V
= 25V, V
= 50V, I
= 10V, R
Test Conditions
DS
GS
GS
2
, I
GS
=10V, T
D
D
=10V
SD
SD
GS
GS
GS
= 32A
= 6V,
= 250 A
Reel Size
/dt = 100A/ s
/dt = 100A/ s
330mm
= 0V,
= 0V
= 16
Tube
T
V
I
I
D
g
C
DD
C
= 1.0mA
= 32A
= 150
=175
= 50V
o
o
C
C
Tape Width
Min
100
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24mm
N/A
0.032
0.040
0.080
1250
18.5
190
Typ
2.4
6.5
4.1
4.6
45
46
26
32
9
-
-
-
-
-
-
-
-
-
-
-
www.fairchildsemi.com
0.036
0.060
0.090
Max
1.25
250
3.6
100
1.0
28
83
87
55
90
1
-
4
-
-
-
-
-
-
-
-
-
-
Quantity
800 units
50 units
Units
nA
pF
pF
pF
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A