FQPF10N60C Fairchild Semiconductor, FQPF10N60C Datasheet - Page 9

• Manufacturer Part Number: FQPF10N60C
• Description: MOSFET N-CH 600V 9.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF10N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 2040pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.73 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP10N60C / FQPF10N60C Rev. C
Mechanical Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
±0.20
±0.10
±0.10
]
10.16
9.40
#1
(7.00)
(Continued)
±0.20
±0.20
[2.54
2.54TYP
TO-220F
±0.20
ø3.18
9
]
±0.10
(1.00x45°)
0.50
+0.10
–0.05
Dimensions in Millimeters
2.54
2.76
(0.70)
±0.20
±0.20
www.fairchildsemi.com