FQPF10N60C Fairchild Semiconductor, FQPF10N60C Datasheet - Page 3

• Manufacturer Part Number: FQPF10N60C
• Description: MOSFET N-CH 600V 9.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF10N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 2040pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.73 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP10N60C / FQPF10N60C Rev. C
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
3000
2500
2000
1500
1000
10
500
10
10
-1
0
1
0
10
2.0
1.5
1.0
0.5
0.0
-1
Top :
Bottom : 4.5 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
10
V
DS
DS
0
10
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
0
D
, Drain Current [A]
C
C
C
15
oss
V
rss
iss
GS
= 10V
20
V
C
C
C
GS
iss
oss
rss
10
= C
= C
= 20V
= C
1
* Notes :
25
10
gs
ds
gd
1. 250
2. T
+ C
+ C
1
C
gd
* Notes ;
= 25
gd
* Note : T
µ
1. V
2. f = 1 MHz
s Pulse Test
(C
ds
°
C
GS
= shorted)
30
= 0 V
J
= 25
°
C
35
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
Variation vs. Source Current
0.2
2
0
and Temperatue
25
°
C
150
0.4
°
C
10
150
4
°
V
V
C
Q
GS
SD
G
0.6
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
25
DS
20
V
°
-55
= 480V
C
DS
V
= 300V
°
C
DS
0.8
6
= 120V
30
1.0
* Notes :
1. V
2. 250
* Notes :
DS
* Note : I
8
1. V
2. 250
µ
= 40V
s Pulse Test
GS
40
www.fairchildsemi.com
µ
= 0V
s Pulse Test
1.2
D
= 9.5A
10
1.4
50