FQPF10N60C Fairchild Semiconductor, FQPF10N60C Datasheet - Page 5

• Manufacturer Part Number: FQPF10N60C
• Description: MOSFET N-CH 600V 9.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF10N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 2040pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.73 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP10N60C / FQPF10N60C Rev. C
Typical Performance Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF10N60C
Figure 11-1. Transient Thermal Response Curve for FQP10N60C
1 0
1 0
1 0
1 0
1 0
1 0
- 1
- 2
- 1
- 2
0
1 0
0
1 0
- 5
- 5
D = 0 . 5
D = 0 .5
0 . 0 1
0 . 0 1
0 .0 5
0 . 0 2
0 .0 2
0 . 2
0 . 0 5
0 .1
0 . 2
0 .1
1 0
1 0
- 4
-4
s in g le p u ls e
s in g le p u ls e
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
-3
- 3
(Continued)
5
1 0
1 0
- 2
- 2
P
1 0
1 0
* N o t e s :
* N o t e s :
DM
-1
- 1
P
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
DM
θ
J M
θ
J M
J C
J C
( t ) = 0 . 8
- T
( t ) = 2 . 5
- T
t
1
C
t
C
2
t
1
= P
= P
t
2
1 0
1 0
°
D M
°
D M
C / W M a x .
C / W M a x .
0
0
* Z
* Z
1
1
θ
/ t
/ t
θ
J C
J C
2
2
( t )
( t )
1 0
1 0
1
1
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